Blanket Films

Blanket Films

Copper |  Implant  |  Low-k  |  Metals  |  PECVD  | Thermal

Copper

 Film Type   Wafer Size   Product ID   Description   Quote 
Copper 200 mm 000CUR000 15 kÅ CuE (annealed), 1 kÅ Cu seed / 250 Ta, 5.5 kÅ thermal oxide, 200mm silicon. RFQ
Copper 200 mm 000CUR009 15 kÅ CuE (annealed), 1 kÅ Cu seed / 250 TaN, 5.5 kÅ thermal oxide, silicon RFQ
Copper 200 mm 000CUR049 15 kA Cu, 1 kA Cu Seed/250A Ta, 5.5 kA thermal oxide, silicon (2mm edge exclusion).

Cu thickness including 1K Cu seed average within 17,000-18,000A, Cu thickness standard deviation within 480A. Oxide and Ta average thickness within 10%. Final Defect Spec: <= 200 @ 250nm (measure wafers #1, 2, 5). This product specification applies only to lot started with ATDF starting material. Lot started with non-ATDF starting material shall be negotiated separately with ATDF WSG.		 RFQ
Copper 200 mm 000CUR051 60K CuE (15 kÅ recipe x 4), 1 kÅ Cu seed / 250 Å Ta, silicon RFQ
Copper 200 mm 000CUR071 15 kÅ CuE (annealed), 1 kÅ Cu Seed / 250 Å Ta, 3 kÅ thermal oxide, silicon. RFQ
Copper 200 mm 000CUR095 15 kÅ CuE (annealed), 1 kÅ Cu seed / 250 Å Ta, 2 kÅ PE-SiO2, silicon. RFQ
Copper 200 mm 000CUR100 15 kÅ CuE (annealed), 1 kÅ Cu seed / 250 Å Ta, 5 kÅ PETEOS, silicon RFQ
Copper 300 mm 000CUR316 20 kÅ CuE (annealed), 1 kÅ Cu seed / 250 Å Ta, 5.5 kÅ PETEOS, silicon RFQ
Copper 300 mm 000CUR317 15 kA CuE, 1 kA Cu seed / 250A Ta, 5.5 kA PETEOS, silicon.

Average of total Cu thickness is 14400-17600A. Thickness standard deviation within 480A. TEOS and Ta average thickness within 10%. Product is guaranteed by outgoing inspection only. No defect scan. This product specification applies only to lot started with ATDF starting material. Lot started with non-ATDF starting material shall be negotiated separately with ATDF WSG.		 RFQ
Copper 300 mm 000CUR329 15 kÅ CuE (annealed), 1 kÅ Cu seed / 250 Å TaN, 2 kÅ thermal oxide, silicon RFQ
Copper 300 mm 000CUR332 40 kÅ CuE (annealed), 1 kÅ Cu seed / 250 Å Ta, 2 kÅ thermal oxide, silicon RFQ
Copper 300 mm 000CUR335 15 kÅ CuE (annealed), 1 kÅ Cu seed / 250 Å Ta, 2 kÅ thermal oxide, silicon RFQ
Copper 300 mm 000MET312 1 kÅ Cu seed, 250 Å TaN, 3 kÅ thermal oxide, silicon RFQ
 

Implant

 Film Type   Wafer Size   Product ID   Description   Quote 
There are no Implants products available at this time.
 

Low-k

 Film Type   Wafer Size   Product ID   Description   Quote 
LowK 200 mm 000BDM000 10 kÅ Black DiamondTM, silicon RFQ
LowK 200 mm 000CVD114 10 kÅ CoralTM, silicon. (K value ~2.9) RFQ
LowK 300 mm 000ULK302 5 kÅ ULK CoralTM, silicon. (K value ~2.5) RFQ
 

Metals

 Film Type   Wafer Size   Product ID   Description   Quote 
Metals 200 mm 000CMP000 8 kA W, 400A TiN / 250A Ti, 6.3 kA thermal oxide, silicon.

Film thickness average within 10% of target. Sigma within 6% of target. This product specification applies only to lot started with ATDF starting material. Lot started with non-ATDF starting material shall be negotiated separately with ATDF WSG.		 RFQ
Metals 200 mm 000MET096 8 kÅ W, 400 Å TiN, silicon RFQ
Metals 300 mm 000MET302 1 kÅ Ta, 2 kÅ PETEOS, Si RFQ
 

PECVD

 Film Type   Wafer Size   Product ID   Description   Quote 
PECVD 200 mm 000CVD080 8 kA PETEOS, silicon.

Oxide thickness average 7600-8400A. Thickness standard Deviation within 240A. <100 adders defect at 0.2um This product specification applies only to lot started with ATDF starting material. Lot started with non-ATDF starting material shall be negotiated separately with ATDF WSG.		 RFQ
PECVD 200 mm 000CVD097 30 kÅ PETEOS, silicon. RFQ
PECVD 200 mm 000CVD111 10 kÅ PETEOS, silicon. RFQ
PECVD 300 mm 000CVD339 20 kÅ PETEOS, silicon. RFQ
PECVD 300 mm 000CVD376 20 kÅ PETEOS, silicon. RFQ
PECVD 300 mm 000CVD377 8 kÅ PETEOS, silicon. RFQ
PECVD 300 mm 000CVD397 10 kÅ PETEOS, silicon. RFQ
 

Thermal

 Film Type   Wafer Size   Product ID   Description   Quote 
Thermal 200 mm 000DIF002 10 kÅ poly, 500 Å oxide, silicon. RFQ
Thermal 200 mm 000DIF119 3 kA thermal nitride on silicon.

Average thickness is 2850-3150A. Product is guaranteed by outgoing inspection only. No defect guaranteed. This product specification applies only to lot started with ATDF starting material. Lot started with non-ATDF starting material shall be negotiated separately with ATDF WSG.		 RFQ
Thermal 200 mm 000DIF152 8 kÅ non-doped polysilicon, 2 kÅ thermal oxide, silicon. RFQ
Thermal 300 mm 000DIF300 1 kÅ thermal oxide (with measurement) RFQ
Thermal 300 mm 000DIF318 30 Å thermal oxide, silicon. RFQ
Thermal 300 mm 000DIF334 3 kÅ non-doped polysilicon, 1 kÅ thermal oxide, silicon. RFQ
Thermal 300 mm 000DIF337 10 kÅ thermal oxide, silicon. RFQ
Thermal 300 mm 000DIF341 5 kÅ non-doped polysilicon, 1 kÅ thermal oxide, silicon. RFQ

Back to top