Analytical Services

Analytical Services

SVTC provides the technology development community with a powerful suite of leading-edge Analytical Services. By integrating these services with its existing technology development capabilities, SVTC extends its value throughout the growing ecosystem of emerging technology development.

As part of either an integrated development program or a stand-alone effort, SVTC's Analytical Services provide emerging technology customers with the data they need to verify or adjust the critical elements of their technology development. The Analytical Services team at SVTC offers competitively priced services with a strong emphasis on cycle time, helping customers get to market faster with production-ready processes.

The key features of SVTC's Analytical Services include:

  • Rapid response and turnaround times
  • Cutting-edge equipment
  • One-stop shop for all analytical requirements
  • Competitive pricing
  • Extensive in-house experience covering the latest materials, techniques and structures
  • Analytical services available for all wafer sizes
  • Services customized to exact, individual requirements
  • Customers' engineers can sit alongside the tool professionals

Specific services and equipment, and corresponding applications, included in SVTC's analytical services offerings include:

  • Atomic Force Microscopy: Surface imaging, micro-roughness measurements
  • Auger-Electron Spectroscopy (AES): Surface composition analysis, elemental mapping, film composition with depth
  • Focused Ion Beam (FIB): High-throughput device-level design modifications, micromachining, advanced circuit edit and prototyping
  • Scanning Electron Microscopy (SEM): Etch verification, thickness measurements (critical dimensions), feature measurements (trenches, vias, transistors), voltage contrasting, Hg probe for k values and capacitance measurements
  • Transmission Electron Microscopy (TEM) and High-Resolution TEM: Gate oxide and thin film metrology, cross-section and plan-view sample analysis, specific area/feature analysis for failure analysis (FA), SAED and CBED diffraction, crystal identification and orientation, silicon and III-V-based materials, high-resolution phase contrast imaging, digital diffractogram analysis, complete set of sample prep tools for polishing/milling, holography, Energy Filtered Imaging
  • Scanning Transmission Electron Microscopy (STEM): X-ray and electron energy loss spectra, scanning TEM HAADF (Z-contrast) imaging, EELS and EDXS linescans, elemental identification, semiquantitative standardless compositional analysis, chemical profiling with sub-1 nm sampling region, Energy Filtered Imaging
  • Dual Beam FIB/SEM: Non-destructive TEM sample preparation and cross-section techniques up to 200 mm, etch verification, thickness measurements, feature measurements (trenches, vias, transistors), rapid time to data and root-cause analysis of yield excursions from common process steps, "slice and view" automated software for high-precision SEM cross-sectioning, High-throughput TEM sample preparation with optional in-situ "lift out" capability
  • Secondary Ion Mass Spectrometry Low Energy SIMS depth profiles: Ultra-shallow dopant profiling, ultra-thin-film characterization, backside depth profiling
  • Vapor Phase Decomposition Inductively Coupled Plasma Mass Spectrometry: Whole-wafer analysis with detection limits down to E07 atoms/cm2, correlation with TXRF measurements, Trace metal contamination analysis n wafer surface, light element analysis